advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 1 dc - 12 ghz discrete power phemt TGF2021-04 key features and performance ? frequency range: dc - 12 ghz ? > 36 dbm nominal psat ? 59% maximum pae ? 11 db nominal power gain ? suitable for high reliability applications ?4mm x 0.35 m power phemt ? nominal bias vd = 8-12v, idq = 300-500ma (u nder rf drive, id rises from 300ma to 960ma) ? chip dimensions: 0.57 x 1.30 x 0.10 mm (0.022 x 0.051 x 0.004 in) primary applications ? point-to-point radio ? high-reliability space ? military ? base stations ? broadband wireless applications product description the triquint TGF2021-04 is a discrete 4 mm phemt which operates from dc-12 ghz. the TGF2021-04 is designed using triquints proven standard 0.35um power phemt production process. the TGF2021-04 typically provides > 36 dbm of saturated output power with power gain of 11 db. the maximum power added efficiency is 59% which makes the TGF2021-04 appropriate for high efficiency applications. the TGF2021-04 is also ideally suited for point-to-point radio, high-reliability space, and military applications. the TGF2021-04 has a protective surface passivation layer providing environmental robustness. lead-free and rohs compliant note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice. 0 5 10 15 20 25 30 35 0246810121416 frequency (ghz) maximum gain (db) mag msg
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 2 table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage 12.5 v 2/ v - negative supply voltage range -5v to 0v i + positive supply current 1.8 a 2/ | i g | gate supply current 28 ma p in input continuous wave power 31 dbm 2/ p d power dissipation see note 3 2/ 3 / t ch operating channel temperature 150 c 4/ t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ for a median life time of 1e+6 hrs, power dissipation is limited to: p d (max) = (150 c C tbase c) / 21.7 ( c/w) 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TGF2021-04 table ii dc probe characteristics (t a = 25 q c, nominal) symbol parameter minimum typical maximum unit idss saturated drain current - 1200 - ma gm transconductance - 1500 - ms v p pinch-off voltage -1.5 -1 -0.5 v v bgs breakdown voltage gate-source -30 - -14 v v bgd breakdown voltage gate-drain -30 - -14 v note: for triquints 0.35um power phemt devices, rf breakdown >> dc breakdown
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 3 TGF2021-04 table iii rf characterization table 1/ (t a = 25 c, nominal) symbol parameter vd = 10v idq = 300ma vd = 12v idq = 300ma units power tuned: psat pae gain rp 2/ cp 2/ g l 3/, 4/ saturated output power power added efficiency power gain parallel resistance parallel capacitance load reflection coefficient 36.8 50 11 6.65 1.855 0.847 e 172.6 37.5 48 11 7.99 1.907 0.847 e 170.8 dbm % db w pf - efficiency tuned: psat pae gain rp 2/ cp 2/ g l 3/, 4/ saturated output power power added efficiency power gain parallel resistance parallel capacitance load reflection coefficient 36 59 11.5 12.25 2.154 0.879 e 167.6 36.7 55 11 13.90 2.021 0.885 e 166.3 dbm % db w pf - table iv thermal information parameter test conditions t ch ( o c) t jc ( q c/w) t m (hrs) q jc thermal resistance (channel to backside of carrier) vd = 12 v idq = 300 ma pdiss = 3.6 w 148 21.7 1.2 e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carri e at 70 c baseplate temperature. 1/ values in this table are scaled from measurements taken from a 1mm unit phemt cell at 10 ghz 2/ large signal equivalent phemt output network 3/ optimum load impedance for maximum power or maximum pae at 10 ghz 4 the reflection coefficients for this device have been calculated from the scaled large signal rp & cp. the series resistance and inductance (rd and ld) shown in the figure on page 4 is excluded
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 4 linear model for 1mm unit phemt cell TGF2021-04 drain lg rg cdg rd ld rdg gate rgs cgs r i + v i - gm v i rds cds ls rs source source rp, cp gate source source drain upc upc = 1mm unit phemt cell 8qlws+(07fhoo 5hihuhqfh3odqh model parameter vd = 8v idq = 75ma vd = 8v idq = 100ma vd = 8v idq = 125ma vd = 10v idq = 75ma vd = 10v idq = 100ma vd = 12v idq = 75ma units rg 0.45 0.45 0.45 0.45 0.450 0.45 w rs 0.14 0.14 0.14 0.17 0.160 0.19 w rd 0.41 0.43 0.46 0.41 0.450 0.410 w gm 0.310 0.318 0.314 0.296 0.303 0.286 s cgs 2.39 2.58 2.70 2.61 2.74 2.72 pf ri 1.22 1.19 1.20 1.24 1.23 1.27 w cds 0.20 0.201 0.201 0.198 0.199 0.196 pf rds 149.1 152.3 158.8 171.8 173.7 187.9 w cgd 0.115 0.107 0.101 0.101 0.098 0.096 pf tau 6.29 6.63 6.99 7.19 7.410 7.79 ps ls 0.009 0.009 0.009 0.009 0.010 0.010 nh lg 0.089 0.089 0.089 0.089 0.089 0.089 nh ld 0.120 0.120 0.120 0.120 0.120 0.120 nh rgs 33000 33000 35100 28900 35700 24400 w rgd 349000 425000 405000 305000 366000 238000 w
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 5 TGF2021-04 linear model for 4mm phemt l - via = 0.0135 nh (5x) gate pads (4x) drain pads (4x) upc upc 36 5 4 upc upc 1 8 7 2
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 6 TGF2021-04 unmatched s-parameter for 4mm phemt bias conditions: vd=12v, idq=300ma note: the s-parameters are calculated by connecting nodes 1-4 together, and nodes 5-8 together to form a 2-port network. frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (ghz) db deg db deg db deg db deg 0.5 -0.365 -146.77 23.560 103.23 -35.222 15.89 -6.160 -161.81 1 -0.379 -163.15 17.793 91.99 -34.982 7.33 -5.842 -168.07 1.5 -0.380 -168.86 14.297 86.04 -34.977 4.06 -5.709 -169.15 2 -0.379 -171.78 11.782 81.48 -35.024 2.20 -5.581 -168.96 2.5 -0.377 -173.57 9.808 77.50 -35.099 0.95 -5.439 -168.34 3 -0.374 -174.80 8.176 73.84 -35.194 0.03 -5.280 -167.59 3.5 -0.370 -175.70 6.779 70.36 -35.308 -0.66 -5.108 -166.83 4 -0.366 -176.41 5.551 67.03 -35.437 -1.16 -4.925 -166.13 4.5 -0.362 -176.98 4.452 63.81 -35.581 -1.51 -4.735 -165.51 5 -0.358 -177.46 3.454 60.68 -35.739 -1.72 -4.541 -165.01 5.5 -0.353 -177.87 2.537 57.64 -35.908 -1.78 -4.346 -164.61 6 -0.348 -178.24 1.686 54.67 -36.087 -1.70 -4.152 -164.31 6.5 -0.343 -178.56 0.891 51.78 -36.275 -1.48 -3.962 -164.12 7 -0.337 -178.86 0.142 48.96 -36.469 -1.12 -3.776 -164.02 7.5 -0.332 -179.14 -0.566 46.21 -36.668 -0.61 -3.596 -164.01 8 -0.327 -179.40 -1.238 43.53 -36.870 0.05 -3.423 -164.07 8.5 -0.321 -179.64 -1.880 40.92 -37.073 0.85 -3.258 -164.19 9 -0.316 -179.88 -2.493 38.36 -37.274 1.80 -3.099 -164.38 9.5 -0.311 179.90 -3.082 35.87 -37.473 2.89 -2.948 -164.62 10 -0.306 179.68 -3.648 33.45 -37.667 4.12 -2.805 -164.90 10.5 -0.301 179.48 -4.193 31.08 -37.856 5.50 -2.669 -165.21 11 -0.296 179.27 -4.720 28.77 -38.039 7.02 -2.541 -165.56 11.5 -0.291 179.07 -5.229 26.51 -38.212 8.69 -2.419 -165.94 12 -0.286 178.88 -5.722 24.31 -38.373 10.53 -2.304 -166.33 12.5 -0.282 178.69 -6.200 22.16 -38.516 12.52 -2.196 -166.75 13 -0.277 178.50 -6.664 20.07 -38.638 14.65 -2.093 -167.18 13.5 -0.273 178.32 -7.114 18.02 -38.733 16.90 -1.997 -167.62 14 -0.269 178.13 -7.552 16.02 -38.801 19.23 -1.906 -168.07 14.5 -0.265 177.95 -7.979 14.07 -38.839 21.61 -1.820 -168.53 15 -0.261 177.77 -8.395 12.16 -38.849 24.03 -1.738 -168.99 15.5 -0.258 177.60 -8.800 10.29 -38.830 26.44 -1.662 -169.45 16 -0.254 177.42 -9.195 8.47 -38.784 28.84 -1.590 -169.92 16.5 -0.251 177.25 -9.581 6.68 -38.712 31.19 -1.521 -170.39 17 -0.248 177.08 -9.958 4.93 -38.616 33.48 -1.457 -170.86 17.5 -0.245 176.91 -10.328 3.22 -38.498 35.70 -1.396 -171.33 18 -0.242 176.74 -10.689 1.54 -38.361 37.83 -1.338 -171.79 18.5 -0.239 176.57 -11.043 -0.11 -38.207 39.87 -1.283 -172.26 19 -0.237 176.40 -11.390 -1.72 -38.037 41.81 -1.231 -172.72 19.5 -0.234 176.24 -11.730 -3.31 -37.855 43.65 -1.182 -173.18 20 -0.232 176.07 -12.064 -4.87 -37.661 45.38 -1.135 -173.63 20.5 -0.230 175.91 -12.392 -6.39 -37.458 47.01 -1.091 -174.08 21 -0.228 175.74 -12.715 -7.90 -37.248 48.53 -1.049 -174.53 21.5 -0.226 175.58 -13.032 -9.37 -37.032 49.95 -1.009 -174.97 22 -0.224 175.42 -13.345 -10.83 -36.812 51.26 -0.971 -175.41 22.5 -0.222 175.26 -13.653 -12.25 -36.588 52.47 -0.934 -175.85 23 -0.220 175.10 -13.957 -13.66 -36.362 53.59 -0.900 -176.28 23.5 -0.218 174.94 -14.256 -15.05 -36.135 54.61 -0.867 -176.71 24 -0.217 174.78 -14.552 -16.41 -35.908 55.53 -0.836 -177.13 24.5 -0.216 174.62 -14.844 -17.76 -35.682 56.35 -0.806 -177.55 25 -0.214 174.46 -15.133 -19.09 -35.460 57.08 -0.777 -177.97 25.5 -0.213 174.31 -15.418 -20.40 -35.242 57.72 -0.750 -178.38 26 -0.212 174.15 -15.701 -21.70 -35.032 58.28 -0.724 -178.79
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 7 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handing, assembly and test. mechanical drawing TGF2021-04 8qlwv ploolphwhuv lqfkhv 7klfnqhvv &klshgjhwrerqgsdgglphqvlrqvduhvkrzqwrfhqwhurierqgsdg &klsvl]hwrohudqfh *1',6%$&.6,'(2)00,& %rqgsdgv *dwh [ [ %rqgsdgv 'udlq [ [ >@ >@ >@ >@ >@ >@ >@ >@ >@ >@ *$7( '5$,1 1 (
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 8 assembly process notes TGF2021-04 reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 se c an alloy station or conveyor furnace with reducing atmosphere should be used. do not use flux coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c.
|
